PRODUCT

• POLYSILICON WAFER CARRIER
• POLYSILICON PADDLES AND SLEDS
• POLYSILICON PLATES AND CATHODE COVERS
• POLYSILICON TUBES AND END CAPS
• VERTICAL BOATS
• SPUTTERING TARGETS

POLYSILICON WAFER CARRIERS

• Designed to accommodate wafer from 4" to 8" in diameter
• Made of unique, ultrahard, high purity CVD polysilicon
• Available as plates, tubes or profile carriers
• Slot configuration allows a wafer capacity of 1 to 400
• Carriers are compatible with automated wafer transport systems

• Size available up to 250mm
• Available with ball joins and tabulation type gas fittings
• SICO's unique process allows customized bonding for specialised applications and minor repairs
• Matching polysilicon end caps can be supplied

VERTICAL BOATS

• Can be made according to customers specifications
• Semiconductor-grade quality
• Working temperature 1350°C
• Joining or non-joining connecting technology

• For plasma and reactive inon etch processes
• Made of CVD polysilicon and joined by SICO's proprietary bonding process
• Available in size from 6" to 30" diameter

SELETED PHISICAL PROPERTIES

Polysilicon

Silicon Carbide

Quartz

DENSITY

2.33 g/cm³

3.0 g/cm³

2.2 g/cm³

Expansion Coefficiency (1000°c)

3.8 X10^-6/K

4.8 X10^-6/K

0.5 X10^-6/K

SPECIFIC HEAT

0.22 cal/(g ·°C)

0.27 cal/(g ·°C)

0.29 cal/(g ·°C)

THERMAL CONDUCTIVITY ( 1000°C )

32W/(mK)

36W/(mK)

4W/(mK)

Young ' s Modules

2.9·10⁷ psi

4.06·10⁷ psi

1.02·10⁷ psi